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參數(shù)資料
| 型號： | 934056333115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 158K |
| 代理商： | 934056333115 |
2001 Apr 25
14
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1203
handbook, halfpage
02
46
40
30
10
0
20
MCD960
VG2-S (V)
IG1
(
A)
4 V
3.5 V
3 V
4.5 V
VGG = 5 V
Fig.27 Gate 1 current as a function of gate 2
voltage; typical values.
Amplifier b
VDS = 5 V; Tj =25 °C.
RG1 = 120 k (connected to VGG); see Fig.35.
handbook, halfpage
01
2
4
0
50
10
3
VAGC (V)
gain
reduction
(dB)
20
30
40
MCD961
Fig.28 Typical gain reduction as a function of the
AGC voltage; see Fig.35.
Amplifier b
VDS = 5 V; VGG = 5 V; RG1 = 120 k;
f = 50 MHz; Tamb =25 °C.
handbook, halfpage
0
gain reduction (dB)
10
50
120
110
90
80
100
20
30
40
MCD962
Vunw
(dB
V)
Fig.29 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.35.
Amplifier b
VDS = 5 V; VGG = 5 V; RG1 = 120 k;
f= 50 MHz; funw = 60 MHz; Tamb =25 °C.
handbook, halfpage
0
gain reduction (dB)
10
50
16
12
4
0
8
20
30
40
MCD963
ID
(mA)
Fig.30 Drain current as a function of gain
reduction; typical values; see Fig.35.
Amplifier b
VDS = 5 V; VGG = 5 V; RG1 = 120 k;
f = 50 MHz; Tamb =25 °C.
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