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參數(shù)資料
| 型號(hào)： | 934056333115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 158K |
| 代理商： | 934056333115 |
2001 Apr 25
11
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1203
DYNAMIC CHARACTERISTICS AMPLIFIER b
Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 12 mA; unless otherwise specied.
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj =25 °C
253040mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
1.7
2.2
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
4
pF
Coss
output capacitance
f = 1 MHz
0.85
pF
Crss
reverse transfer capacitance f = 1 MHz
15
30
fF
F
noise gure
f = 10.7 MHz; GS = 20 mS; BS =0
911
dB
f = 400 MHz; YS =YS opt
0.9
1.5
dB
f = 800 MHz; YS =YS opt
1.1
1.8
dB
Gtr
power gain
f = 200 MHz; GS = 2 mS; BS =BS opt;
GL = 0.5 mS; BL =BL opt; note 1
34
dB
f = 400 MHz; GS = 2 mS; BS =BS opt;
GL = 1 mS; BL =BL opt; note 1
30
dB
f = 800 MHz; GS = 3.3 mS; BS =BS opt;
GL = 1 mS; BL =BL opt; note 1
25
dB
Xmod
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 2
at 0 dB AGC
90
dB
V
at 10 dB AGC
92
dB
V
at 40 dB AGC
100
105
dB
V
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