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參數(shù)資料
| 型號： | 934056819118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 934056819118 |
Philips Semiconductors
IRFR220
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 14 August 2001
7 of 12
9397 750 08519
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
max
min
typ
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
01
2
3
4
5
VGS (V)
ID
(A)
max
typ
min
10
0
1
10
C
(pF)
103
102
VDS (V)
Ciss
Crss
Coss
003aaa135
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