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參數(shù)資料
| 型號(hào)： | 934056819118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 934056819118 |
Philips Semiconductors
IRFR220
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 14 August 2001
6 of 12
9397 750 08519
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
0
2
468
10
VDS (V)
10
8
6
4
2
0
ID
(A)
VGS (V) = 10
8
5.5
5
6
4.5
003aaa132
VDS > ID x RDSon
0
1
2
3
4
5
ID
(A)
34
5
6
2
VGS (V)
003aaa133
Tj = 150
ο
C
25 οC
VGS (V) =
6
4.5
5
5.5
10
2
3
1
0
RDSon
(
)
ID (A)
02
4
6
8
10
12
003aaa134
03aa31
0.2
1.0
1.8
2.6
-60
20
100
180
T
j
(οC)
a
3.4
a
R
DSon
R
DSon 25
°C
()
------------------------------
=
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