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參數(shù)資料
| 型號(hào)： | 934056819118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 266K |
| 代理商： | 934056819118 |
Philips Semiconductors
IRFR220
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 14 August 2001
5 of 12
9397 750 08519
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS = 0 V
200
V
VGS(th)
gate-source threshold voltage
234V
IDSS
drain-source leakage current
VDS = 200 V; VGS =0V
25
A
VDS = 160 V; VGS =0V; Tj = 125 °C
250
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 2.9 A
0.7
0.8
1.9
Dynamic characteristics
gfs
forward transconductance
VDS =50V; ID = 2.9 A
1.7
S
Qg(tot)
total gate charge
10
14
nC
Qgs
gate-source charge
1.5
3.0
nC
Qgd
gate-drain (Miller) charge
4.0
7.9
nC
Ciss
input capacitance
280
pF
Coss
output capacitance
41
pF
Crss
reverse transfer capacitance
25
pF
td(on)
turn-on delay time
VDD = 100 V; RD =20 ; VGS =10V;
RG =18
5.0
ns
tr
rise time
17
ns
td(off)
turn-off delay time
22
ns
tf
fall time
18
ns
Source-drain (reverse) diode
VSD
1.8
V
trr
reverse recovery time
IS = 4.8 A; dIS/dt = 100 A/s;
VGS =0V; VDS =30V
85
170
ns
Qr
recovered charge
0.2
1.8
C
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