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| 型號(hào)： | 934056819118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 266K |
| 代理商： | 934056819118 |
Philips Semiconductors
IRFR220
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 14 August 2001
4 of 12
9397 750 08519
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value
Unit
Rth(j-mb)
thermal resistance from junction to mounting
base
mounted on a metal clad substrate; Figure 4
3
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
1
10
(K/W)
0.02
10-1
Zth(j-mb)
tp
T
P
t
T
δ =
single pulse
δ = 0.5
0.2
0.1
0.05
10
1
10-1
10-2
10-3
10-4
tp (s)
003aaa131
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