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參數(shù)資料
| 型號： | 934056819118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 934056819118 |
Philips Semiconductors
IRFR220
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 14 August 2001
2 of 12
9397 750 08519
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
200
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
4.8
A
Ptot
total power dissipation
Tmb =25 °C
42
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 2.9 A
0.7
0.8
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
200
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
200
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
4.8
A
3.0
A
IDM
peak drain current
Tmb =25 °C; tp ≤ 10 s
19
A
Ptot
total power dissipation
42
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain (reverse) diode
IS
source (diode forward) current (DC)
Tmb =25 °C
4.8
A
ISM
peak (diode forward) source current Tmb =25 °C; tp ≤ 10 s
19
A
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