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| 型號(hào)： | 934056819118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 934056819118 |
Philips Semiconductors
IRFR220
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 14 August 2001
3 of 12
9397 750 08519
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa15
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
T
mb
(
o
C)
(%)
03aa23
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
mb
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
102
10
1
10-1
10-2
ID
(A)
110
102
103
VDS (V)
RDSon = VDS / ID
DC
tp = 10 s
1 ms
10 ms
100 ms
tp
T
P
t
T
δ =
003aaa129
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