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| 型號(hào)： | 934056819118 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 11/12頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | 934056819118 |
Philips Semiconductors
IRFR220
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 14 August 2001
8 of 12
9397 750 08519
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °C and 150 °C; VGS =0V
ID = 4.8 A; VDD = 160 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
0
1
2
3
4
5
(A)
VSD (V)
1.0
0.8
0.6
0.4
0.2
IS
7
Tj = 150
ο
C
25 οC
6
003aaa136
0
2
4
6
8
10
0
2
4
6
8
(V)
VGS
QG (nC)
003aaa137
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