Revision 17 2-55 Timing Characteristics 1.5 V DC Core Voltage Figure 2-20 Output DDR Timing" />
參數(shù)資料
型號: AGLN250V5-CSG81I
廠商: Microsemi SoC
文件頁數(shù): 120/150頁
文件大?。?/td> 0K
描述: IC FPGA NANO 1KB 250K 81-CSP
標準包裝: 640
系列: IGLOO nano
邏輯元件/單元數(shù): 6144
RAM 位總計: 36864
輸入/輸出數(shù): 60
門數(shù): 250000
電源電壓: 1.425 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: -40°C ~ 85°C
封裝/外殼: 81-WFBGA,CSBGA
供應商設備封裝: 81-CSP(5x5)
IGLOO nano Low Power Flash FPGAs
Revision 17
2-55
Timing Characteristics
1.5 V DC Core Voltage
Figure 2-20 Output DDR Timing Diagram
11
6
1
7
2
8
3
910
45
28
3
9
tDDROREMCLR
tDDROHD1
tDDROREMCLR
tDDROHD2
tDDROSUD2
tDDROCLKQ
tDDRORECCLR
CLK
Data_R
Data_F
CLR
Out
tDDROCLR2Q
710
4
Table 2-82 Output DDR Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter
Description
Std.
Units
tDDROCLKQ
Clock-to-Out of DDR for Output DDR
1.07
ns
tDDROSUD1
Data_F Data Setup for Output DDR
0.67
ns
tDDROSUD2
Data_R Data Setup for Output DDR
0.67
ns
tDDROHD1
Data_F Data Hold for Output DDR
0.00
ns
tDDROHD2
Data_R Data Hold for Output DDR
0.00
ns
tDDROCLR2Q
Asynchronous Clear-to-Out for Output DDR
1.38
ns
tDDROREMCLR
Asynchronous Clear Removal Time for Output DDR
0.00
ns
tDDRORECCLR
Asynchronous Clear Recovery Time for Output DDR
0.23
ns
tDDROWCLR1
Asynchronous Clear Minimum Pulse Width for Output DDR
0.19
ns
tDDROCKMPWH
Clock Minimum Pulse Width HIGH for the Output DDR
0.31
ns
tDDROCKMPWL
Clock Minimum Pulse Width LOW for the Output DDR
0.28
ns
FDDOMAX
Maximum Frequency for the Output DDR
250.00
MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
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