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參數(shù)資料
| 型號： | AM29N323DT11AWKI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 18/48頁 |
| 文件大?。?/td> | 824K |
| 代理商： | AM29N323DT11AWKI |
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August 8, 2002
Am29N323D
17
bank address and the data 90h. The second cycle
need only contain the data 00h. The bank then returns
to the read mode.
The device offers accelerated program operations
through V
PP
. When the system asserts V
ID
on this
input, the device automatically enters the Unlock
Bypass mode. The system may then write the
two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
V
PP
input to accelerate the operation. Note that sectors
must be unlocked using the Sector Lock/Unlock
command sequence prior to raising V
PP
to V
ID
.
Figure 1
illustrates the algorithm for the program oper-
ation. Refer to the Erase/Program Operations table in
the AC Characteristics section for parameters, and
Figure 12
for timing diagrams.
Figure 1.
Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See
Table 4
for program command sequence.
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