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參數(shù)資料
| 型號： | AM29N323DT11AWKI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 39/48頁 |
| 文件大?。?/td> | 824K |
| 代理商： | AM29N323DT11AWKI |
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38
Am29N323D
August 8, 2002
AC CHARACTERISTICS
Note:
The previous behavior of RDY refers to devices that have an extended autoselect ID code of 01h. The current behavior of
RDY refers to devices that have an extended autoselect ID code of 20h.
Figure 19.
Initial Access with Address Boundary Latency
CLK
AVD#
RDY
(previous)
High-Z
High-Z
High-Z
RDY
(current)
High-Z
A/DQ0:
A/DQ15
(current)
OE#
device is programmable from 4 to 7 total cycles
during initial access (here, programmable wait state
function is set to 02h; 6 cycles total)
1 additional
wait state if
address is
at boundary
AVD# low with clock
present enables
burst read mode
Address
A16:A21
(all)
boundary
latency
Address
D1
D2
High-Z
A/DQ0:
A/DQ15
(previous)
Address
D1
D2
D0
D0
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