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參數(shù)資料
| 型號(hào)： | AM29N323DT11AWKI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 42/48頁 |
| 文件大小： | 824K |
| 代理商： | AM29N323DT11AWKI |
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August 8, 2002
Am29N323D
41
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 1.8 V V
CC
, 1 million cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 1.8 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 4
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
32 Kword
1.5
15
s
Excludes 00h programming
prior to erasure (Note 4)
4 Kword
0.3
5
Chip Erase Time
97
s
Word Programming Time
11.5
360
μs
Excludes system level
overhead (Note 5)
Accelerated Word Programming Time
4
210
μs
Chip Programming Time (Note 3)
24
72
s
Excludes system level
overhead (Note 5)
Accelerated Chip Programming Time
8
24
s
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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