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參數(shù)資料
| 型號(hào)： | AM29N323DT11AWKI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 41/48頁 |
| 文件大?。?/td> | 824K |
| 代理商： | AM29N323DT11AWKI |
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40
Am29N323D
August 8, 2002
AC CHARACTERISTICS
Note:
Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking
the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure valid information.
Figure 21.
Back-to-Back Read/Write Cycle Timings
OE#
CE#
WE#
t
OH
A/DQ0:
A/DQ15
A16: A20
AVD#
PD/30h
PA/SA
AAh
555h
RA
PA/SA
t
WC
t
DS
t
DH
t
RC
t
RC
t
OE
t
OEH
t
AS
t
AH
t
ACC
t
WP
t
GHWL
t
DF
t
WC
t
SR/W
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
Begin another
write or program
command sequence
RD
RA
RA
RA
RD
t
WPH
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