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參數(shù)資料
| 型號(hào)： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 667K |
| 代理商： | ATF-50189 |
Figure 5. Input matching & biasing networks
1
Figure 6. Measured trajectories of input impedance during the
various phases of matching
Linear Simulation
AnRFsimulatorlikeADSallowstheinputandoutputtuning
networks to be dimensioned with fewer “cut & try” itera-
tions. In addition, critical parameters such as stability and
gaincanbepredictedduringthepreliminarydesignstage.
For example, if simulation forecasts a strong tendency to
self-oscillation, the designer can pre-empt the problem
byincorporatingadditionalstabilizationcomponentsinto
the preliminary circuit.
ThereisnoneedforpreliminarycharacterizationoftheATF-
50189astheTouchstoneformatted“s2p”filesatvariousDC
biasingconditionsandtheADSmodelcanbedownloaded
from the Avago Technologies website.
Thecorrelationbetweensimulationandmeasurementdata
hinges on how detailed the equivalent circuit is.To strike a
reasonable compromise between circuit complexity and
simulationaccuracy,onlythecomponents’andPCB’smost
significant first-order parasitic are included. For example,
when a ground return path consists of many via-holes in
parallel,theresultantparasiticapproximatesidealground.
So,thevia-holescanbeexcludedfromthesimulatedcircuit
without adversely affecting the accuracy.
Thetrajectoriesoftheinputmatchcanbeverifiedina‘step-
by-step’mannerasshowninthefigure6.Thecurvemarked
as“1”representstheinitialimpedanceatthepositionofthe
first matching component, C1. Subsequently, the addition
of C1 moves the input-side impedance along the constant
resistance circle to“2”.The shunt capacitor, C2, shifts point
“2” to the final position “3” near to the Smith chart centre
whilst traveling along the constant admittance circle.
S LC
C
C=1. pF
L=Ls
S LC
C
C=1 pF
L=1.0 nH
VAR
VAR1
Ls =0. nH
W=1. mm
Eqn
Va r
MS UB
MS ub1
TanD=0.0
Er=.
H=0. mm
MS ub
S _P aram
S P 1
S tep=0.0 GHz
S top=.9 GHz
S tart=1.9 GHz
S -P ARAMETERS
COAX
TL9
L= mm
S LC
C1
C=1. pF
L=Ls
MLIN
TL
L=. mm
W=W
MLIN
TL1
L=1.1 mm
W=W
MLIN
TL
L= mm
W=W
Term
Term1
Z=0 Ohm
Num=1
MLIN
TL
L=1. mm
W=W
P LCQ
L1
C=0. pF
Ql=.0
L=1 nH
S P
S NP 1
1
R e f
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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