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參數(shù)資料
| 型號(hào)： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大?。?/td> | 667K |
| 代理商： | ATF-50189 |
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Inadvertent coupling between the amplifier’s input and output and component parasitic can lead to instability in
the upper microwave region. If there are pronounced gain peaks above its operating frequency, the amplifier may
oscillate under certain operating conditions. In a wideband sweep test of the ATF-50189 demoboard up to 18 GHz,
no abnormal peak was recorded in the frequency response.
Figure 14. Stability (k) calculated from measured s-parameters
10
9
1
0
cl00-1# -ele match
k
Start: 10.000000 MHz
Stop: .000000 GHz
0/1/00 11::
ES
Like all microwave transistors, the ATF-50189 demonstrates increasing gain corresponding with decreasing frequency.
If this phenomenon is not tamed with the appropriate countermeasures, the amplifier can break into self-oscillation
below its operating frequency - in the tens of MHz range. To assess the effectiveness of the low frequency circuit sta-
bilization described previously, the Rollett stability criterion was calculated from the measurement of the demoboard’s
s-parameters. The ATF-50189 demoboard exhibits unconditional stability (k >1) over the range of frequencies that an
8753 network analyzer is capable of operating. This reduces the design effort required to adapt the ATF-50189 into
the final product.
Figure 13. Overlay of fundamental tone and intermodulation product
dBm
10
0
-10
-0
-90
SoftPlot Measurement Presentation
imd f1
Start: .99 GHz
Stop: .000 GHz
Res BW: kHz
Vid BW: kHz
Sweep: 10 ms
1/1/00 1::
HPE
dm_imd.spt
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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