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參數(shù)資料
| 型號： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 13/14頁 |
| 文件大?。?/td> | 667K |
| 代理商： | ATF-50189 |
The 1 dB gain compression point, P1dB, indicates the upper limit of either the input or the output power level at which
saturation has started to occur. Non-linear effects become increasingly prominent as the amplifier is driven to this
limit. Linear modulation schemes require the power to be backed off several dBs from this limit. The P1dB is measured
by progressively increasing the input power while noting the point when the gain became compressed by 1 dB. P1dB
is customarily referred to the output. The demoboard nominal output P1dB is approximately 25dBm.
Figure 11. Measured forward gain and reverse isolation
dB
1
10
0
-
-10
-1
-0
-
-0
-
dm
S1
Start: 1.900000 GHz
Stop: .900000 GHz
0/1/00 11::
ES
dm_Spar.spt
1
S1
.0000 GHz
1. dB
Figure 10. Measured input and output return loss
dB
0
-
-10
-1
-0
dm
S11
S
Start: 1.900000 GHz
Stop: .900000 GHz
0/1/00 11::
ES
The gain was approximately 12.8 dB in the middle of the pass-band. Slightly more gain can be obtained at the expense
of higher cost by using high Q inductors and/or a PCB substrate with lower loss.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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