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參數(shù)資料
| 型號： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 667K |
| 代理商： | ATF-50189 |
Figure 9. Measured NF
dm1
1.
1.9
.1
.
.9
100
00
Freq (MHz)
NF
(dB)
Measured performance
The demoboard performance was measured under the
following test conditions: - Vds = 4.5 V, Ids = 280 mA and
fc = 2.4 GHz.
TheATF-50189isintendedforeitherthedriveramplifier,or
thesecond-stageLNAslots,intransmitandreceivechains,
respectively. So, matching for minimum noise figure (NF)
doesnotcarrythesameover-ridingconsiderationaswould
have been in a first-stage LNA. However, good return loss
over a broad bandwidth is required in these two slots. In
line with this design goal, no attempt was made to tweak
the input match for the lowest NF.
While satisfying the requirement for good input match,
the NF can be improved, especially at higher microwave
frequencies, by reducing the inevitable circuit losses. The
low cost bias inductor at the input can be replaced with a
higherQcomponent,e.g.air-coredspringwoundinductor.
The degradation in NF due to losses in the inductor can
be estimated from: -
u
l
u
Q
loss
=
log
20
Additionally, some reduction in input-side loss may be
obtainedbychangingthePCBmaterialfromFR4toalower
loss substrate, such as Rogers RO4350.
The ATF-50189 demoboard amplifier exhibits good input
and output return losses. This minimizes detuning effects
when the amplifier is cascaded with other stages in the
RF chain. For example, filters and aerials are especially
susceptibletotheadverseeffectsofreflectiveterminations.
Designingtheamplifier’sinputandoutputforaclosematch
to50overtheoperatingbandwidth,preventsunpredict-
able shift in the cascaded frequency response.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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