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參數(shù)資料
| 型號(hào)： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 11/14頁 |
| 文件大小： | 667K |
| 代理商： | ATF-50189 |
Figure 7. Output biasing and matching circuit
Figure 8. Measured trajectories of output impedance
1
The trajectories of the output match are shown in figure 8.
Thecurvemarkedas“1”representstheinitialimpedanceat
the position of the first output matching component, C3.
Subsequently,theadditionofC3movesthetracealongthe
constant resistance circle to“2”.The last matching compo-
nent, C4 nudges the curve along the constant admittance
circle to position “3” in the vicinity of the chart centre.
Output:
C2~TL4 17 + j22
SLC
C
C=. pF
L=Ls
SLC
C
C=1 pF
L=Ls
PLCQ
L
C=0. pF
Ql=.0
L=1 nH
MLIN
TL
L=. mm
W=W
COAX
TL10
L= mm
MLIN
TL
L=1. mm
W=W
MLIN
TL
L=1. mm
W=W
MLIN
TL
L=. mm
W=W
Term
Z=0 Ohm
Num=
SLC
C
C=1 pF
L=1.0 nH
SP
SNP1
1
Ref
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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