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參數(shù)資料
| 型號(hào)： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 667K |
| 代理商： | ATF-50189 |
Figure 12. Measured gain vs. output power
1.
1.0
11.
11.0
10.
10.0
9.
9.0
.
.0
.
dm
G
Start: 10.000000 dBm
Stop: 0.000000 dBm
Pout
P1dB_dm_ele.SP~.spt
The intercept point is another measure of amplifier linearity. The theoretical point when the fundamental signal and
the third order intermodulation distortion are of equal amplitude is the third order intercept point, IP3. The distortion
level at other power levels can be conveniently calculated from the amplifier’s IP3 specification.
Two test signals spaced 5 MHz apart were used for evaluating the ATF-50189 demoboard. The large dynamic range
between the fundamental tones and the intermodulation products meant that the latter is barely above the spectrum
analyzer’s noise floor.To measure the 3rd order product amplitude accurately, a very narrow sweep span can be used to
improve the signal to noise ratio. As a tradeoff from the narrow sweep span, only one fundamental and one 3rd order
intermodulation output signals can be practically displayed on the graph. Both the fundamental and intermodulation
tones are overlaid over the same frequency axis for amplitude comparison purpose. The IP3, referenced to the output,
can be calculated from: -
2
3
IM
P
IP
fund
+
=
where fund
P
is the amplitude of either one of the fundamental outputs, and
IM
is the amplitude difference between
the fundamental tones and the intermodulation products.
The output intercept point, OIP3, is approximately 45dBm.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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