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參數(shù)資料
| 型號： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 667K |
| 代理商： | ATF-50189 |
R10
C9
J3
C7
C5
C3
C4
Q1
C8
L2
L3
L1
C1
R7 R6 R5 R4 R3 R2
J1
J2
R1
R8
R9
C6
C2
Demoboard
Agenericdemonstrationboardisavailableforquickproto-
typingandevaluationoftheATF-50189intheVHFtill3GHz
range.To replicate the material cost and space constraints
imposed on consumer products, the demoboard was de-
signed around low cost 0.031inch FR4 dielectric and small
surfacemountcomponents.Unfortunately,thesignificant
high frequency losses in FR4 and low Q inductors detract
from the ATF-50189’s true performance potential. RF con-
nections to the demoboard are made via edge-mounted
microstrip to SMA coax transitions, J1 and J2.
Figure 2. Fully assembled demoboard with connectors and screws for heatsink
Figure 3. Component layout legend
The demoboard requires a single 4.8 V power supply. The
relativelyhighcurrent(>300mA)drawnbythedemoboard
can result in appreciable voltage drop over long supply
wires. The 4-pin connector, J3, permits 4-wire “Kelvin
contact”to be used for compensating for voltage drop in
conjunction with power supplies that support such func-
tion. If a conventional 2-wire supply is used, J3’s two outer
leads are left unconnected.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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