- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295140 > BFG197A/XR (NXP SEMICONDUCTORS) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | BFG197A/XR |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 114K |
| 代理商： | BFG197A/XR |
1995 Sep 13
3
Philips Semiconductors
Product specication
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. TS is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current
DC value, continuous
100
mA
Ptot
total power dissipation
up to Ts =75 °C; note 1
350
mW
Tstg
storage temperature range
65
+150
°C
Tj
junction operating temperature
175
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
from junction to soldering point; note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB =5V
100
nA
hFE
DC current gain
IC = 50 mA; VCE =5V
40
110
Cc
collector capacitance
IE =ie = 0; VCB = 8 V; f = 1 MHz
1.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
3.3
pF
Cre
feedback capacitance
IC =ic = 0; VCB =8V; f=1MHz
0.85
pF
fT
transition frequency
IC = 50 mA; VCE = 4 V; f = 2 GHz
7.5
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 50 mA; VCE =6V;
Tamb =25 °C; f = 1 GHz
16
dB
IC = 50 mA; VCE =6V;
Tamb =25 °C; f = 2 GHz
10
dB
F
noise gure
Γ
s = Γopt; IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
1.7
dB
Γs = Γopt; IC = 50 mA; VCE =6V;
Tamb =25 °C; f = 2 GHz
2.3
dB
d2
second order intermodulation
distortion
VCE =6V;Vo = 50 dBmV;
51
dB
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFY180P | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| BGF109C | 10 FUNCTIONS, DATA LINE FILTER |
| BGF109L | 10 FUNCTIONS, DATA LINE FILTER |
| BGY85A | CATV amplifier modules |
| BH-200 | MAGNETIC FIELD SENSOR-HALL EFFECT, RECTANGULAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG197W | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-343 |
| BFG197W/X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-343 |
| BFG197W/XR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-343R |
| BFG198 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 8 GHz wideband transistor |
| BFG198 T/R | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。