參數(shù)資料
型號： BLF4G22S-100
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 13/14頁
文件大?。?/td> 82K
代理商： BLF4G22S-100
9397 750 14338
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
8 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
American Technical Ceramics type 100A or capacitor of same quality.
[3]
American Technical Ceramics type 180R or capacitor of same quality.
[4]
Striplines are on a double copper-clad Taconic RF35 PCB (
ε
r = 3.5); thickness = 0.76 mm.
Table 10:
List of components (see Figure 6 and Figure 7 )
Component
Description
Value
Dimensions
C1, C2, C11
tantalum capacitor
10
F; 35 V
C3
multilayer ceramic chip capacitor
4.7
F; 25 V
C4, C10
multilayer ceramic chip capacitor
[1] 8.2 pF
C5, C8, C14,
C15
multilayer ceramic chip capacitor
1.5
F; 50 V
C6
multilayer ceramic chip capacitor
[2] 0.6 pF
C7
multilayer ceramic chip capacitor
[1] 4.7 pF
C9
multilayer ceramic chip capacitor
220 nF; 50 V
C12
electrolytic capacitor
220
F; 63 V
C13
tantalum capacitor
4.7
F; 50 V
C16
multilayer ceramic chip capacitor
[3] 7.5 pF
L1
stripline
[4] Z0 =50
(W
× L) 32.3 mm × 1.7 mm
L2
stripline
[4] Z0 =50
(W
× L) 2.2 mm × 1.7 mm
L3
stripline
[4] Z0 =24
(W
× L) 2.3 mm × 4.8 mm
L4
stripline
[4] Z0 =15
(W
× L) 2.4 mm × 8mm
L5
stripline
[4] Z0 = 9.5
(W
× L) 9.3 mm × 14 mm
L6
stripline
[4] Z0 =60
(W
× L) 4 mm × 1.2 mm
L7
stripline
[4] Z0 =60
(W
× L) 14.5 mm × 1.2 mm
L8
stripline
[4] Z0 = 8.2
(W
× L) 9.3 mm × 16.8 mm
L9
stripline
[4] Z0 = 5.5
(W
× L) 3 mm × 25.8 mm
L10
stripline
[4] Z0 =50
(W
× L) 11 mm × 1.7 mm
L11
stripline
[4] Z0 =50
(W
× L) 9.5 mm × 1.7 mm
L12
stripline
[4] Z0 =34
(W
× L) 3 mm × 3mm
L13
stripline
[4] Z0 =50
(W
× L) 12.7 mm × 1.7 mm
L14
stripline
[4] Z0 =43
(W
× L) 13.5 mm × 2.1 mm
R1
SMD resistor
4.7
; 0.1 W
相關(guān)PDF資料
PDF描述
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF6G10LS-200R Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF872 UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G22S-100,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF5 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget
BLF521 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor
BLF521,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR DMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF522 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor
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