參數(shù)資料
型號： BLF4G22S-100
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 7/14頁
文件大小： 82K
代理商： BLF4G22S-100
9397 750 14338
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
2 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
1.3 Applications
s RF power ampliers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range.
2.
Pinning information
[1]
Connected to ange
3.
Ordering information
4.
Limiting values
Table 2:
Pinning
Pin
Description
Simplied outline
Symbol
BLF4G22-100 (SOT502A)
1
drain
2
gate
3
source
BLF4G22S-100 (SOT502B)
1
drain
2
gate
3
source
3
2
1
3
2
sym039
3
2
1
3
2
sym039
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLF4G22-100
-
anged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G22S-100
-
earless anged LDMOST ceramic package; 2 leads
SOT502B
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+15
V
ID
drain current
-
12
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
-
200
°C
相關PDF資料
PDF描述
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF6G10LS-200R Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF872 UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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