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參數(shù)資料
| 型號(hào)： | BUK7720-55A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | CAPACITOR, 22000UF 25V CAPACITOR, 22000UF 25V; CAPACITANCE:22000UF; VOLTAGE RATING, DC:25V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:LLS; TEMP, OP. MAX:85(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes |
| 中文描述： | 29 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 121K |
| 代理商： | BUK7720-55A |
Philips Semiconductors
BUK7720-55A
N-channel TrenchMOS standard level FET
Product data
Rev. 02 — 7 June 2004
2 of 12
9397 750 13202
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
I
DM
is limited by chip, not package.
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
-
-
-
-
Max
55
29
32
150
Unit
V
A
W
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°
C
T
j
= 150
°
C
15
-
20
37
m
m
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
-
-
-
-
Max
55
55
±
20
29
Unit
V
V
V
A
R
GS
= 20 k
T
mb
= 25
°
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
-
20
A
I
DM
peak drain current
[1]
117
A
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
I
DRM
peak reverse drain current
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
total power dissipation
storage temperature
operating junction temperature
-
55
55
32
+150
+150
W
°
C
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
29
117
A
A
unclamped inductive load; I
D
= 29 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
;
starting T
j
= 25
°
C
-
260
mJ
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