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參數(shù)資料
| 型號： | BUK7720-55A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | CAPACITOR, 22000UF 25V CAPACITOR, 22000UF 25V; CAPACITANCE:22000UF; VOLTAGE RATING, DC:25V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:LLS; TEMP, OP. MAX:85(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes |
| 中文描述： | 29 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 121K |
| 代理商： | BUK7720-55A |
Philips Semiconductors
BUK7720-55A
N-channel TrenchMOS standard level FET
Product data
Rev. 02 — 7 June 2004
6 of 12
9397 750 13202
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 25 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
VDS (V)
ID
(A)
VGS (V) =
20
14
12
11
10
9.0
8.5
8.0
7.5
7.0
6.0
5.5
5.0
4.5
6.5
03nc63
03nc62
10
15
20
25
30
5
10
15
20
25
VGS (V)
RDSon
(m
)
03nc64
15
20
25
30
35
40
45
0
50
100
150
ID (A)
RDSon
(m
)
10
8
7
5.5
6
6.5
VGS (V) =
03nc24
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
a
-60
-20
20
60
100
140
Tj (oC)
180
a
R
DSon 25 C
°
)
---------------------------
=
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