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參數(shù)資料
| 型號(hào)： | BUK7720-55A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | CAPACITOR, 22000UF 25V CAPACITOR, 22000UF 25V; CAPACITANCE:22000UF; VOLTAGE RATING, DC:25V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:LLS; TEMP, OP. MAX:85(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes |
| 中文描述： | 29 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | BUK7720-55A |
Philips Semiconductors
BUK7720-55A
N-channel TrenchMOS standard level FET
Product data
Rev. 02 — 7 June 2004
5 of 12
9397 750 13202
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
55
50
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
2
1.2
-
3
-
-
4
-
4.4
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
drain-source on-state
resistance
-
-
15
-
20
37
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-to-source charge
Q
gd
gate-to-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 10 V; V
DD
= 44 V;
I
D
= 25 A;
Figure 14
-
-
-
-
-
-
-
-
-
-
-
29
6
14
1200
290
180
15
74
70
40
4.5
-
-
-
1590
360
240
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 5 V; R
G
= 10
from drain lead 6 mm from
package to centre of die
from source lead 6 mm from
package to source bond pad
L
s
internal source inductance
-
7.5
-
nH
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 15 A; V
GS
= 0 V;
Figure 15
I
S
= 20 A;dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
-
0.85
1.2
V
t
rr
Q
r
-
-
45
110
-
-
ns
nC
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