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參數(shù)資料
| 型號： | BUK7720-55A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | CAPACITOR, 22000UF 25V CAPACITOR, 22000UF 25V; CAPACITANCE:22000UF; VOLTAGE RATING, DC:25V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:LLS; TEMP, OP. MAX:85(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes |
| 中文描述： | 29 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 121K |
| 代理商： | BUK7720-55A |
Philips Semiconductors
BUK7720-55A
N-channel TrenchMOS standard level FET
Product data
Rev. 02 — 7 June 2004
3 of 12
9397 750 13202
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
V
GS
≥
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03ne36
0
20
40
60
80
100
120
Pder
(%)
0
25
50
75
100
125
150
175
Tmb (oC)
03ne37
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Ider
(%)
Tmb (oC)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ne08
10-1
1
10
102
103
1
10
102
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 us
100 us
tp
tp
T
T
P
t
δ
=
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