參數(shù)資料
型號(hào): CY7C1020CV33-10ZXCT
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 32K X 16 STANDARD SRAM, 10 ns, PDSO44
封裝: LEAD FREE, TSOP2-44
文件頁數(shù): 3/9頁
文件大?。?/td> 133K
代理商: CY7C1020CV33-10ZXCT
CY7C1020CV33
Document #: 38-05133 Rev. *D
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND
[1] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Commercial
0
°C to +70°C
3.3V
± 10%
Industrial
–40
°C to +85°C3.3V ± 10%
Automotive
–40
°C to +125°C3.3V ± 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
1020CV33-10 1020CV33-12 1020CV33-15
Unit
Min.
Max.
Min.
Max.
Min.
Max.
VOH
Output HIGH Voltage VCC = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.0
VCC +
0.3
2.0
VCC +
0.3
2.0
VCC +
0.3
V
VIL
Input LOW Voltage[1]
0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
GND < VI < VCC
Com’l / Ind’l
1+1
–1
+1
–1
+1
A
Automotive
-
–20
+20
A
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
Com’l / Ind’l
1+1
–1
+1
–1
+1
A
Automotive
-
–20
+20
A
IOS
[2]
Output Short
Circuit Current
VCC = Max., VOUT = GND
300
–300
mA
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
Com’l / Ind’l
90
85
80
mA
Automotive
-
85
mA
ISB1
Automatic CE
Power-down Current
—TTL Inputs
Max. VCC, CE > VIH
VIN > VIH or VIN < VIL,
f = fMAX
Com’l / Ind’l
15
mA
Automotive
-
20
mA
ISB2
Automatic CE
Power-down Current
—CMOS Inputs
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
Com’l / Ind’l
5
mA
Automotive
-
10
mA
Capacitance[3]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 3.3V
8pF
COUT
Output Capacitance
8
pF
Thermal Resistance[3]
Parameter
Description
Test Conditions
44-pin TSOP-II
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA / JESD51.
76.92
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
15.86
°C/W
Notes:
1. VIL (min.) = –2.0V and VIH(max) = VCC + 0.5V for pulse durations of less than 20 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
3. Tested initially and after any design or process changes that may affect these parameters.
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