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參數(shù)資料
| 型號(hào)： | DS1865K |
| 廠商： | Maxim Integrated Products |
| 文件頁(yè)數(shù)： | 10/67頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | KIT EVAL FOR DS1865 |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 主要目的： | 電信，無源光學(xué)網(wǎng)絡(luò)（PON） |
| 已用 IC / 零件： | DS1865 |
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DS1865
PON Triplexer Control and
Monitoring Circuit
18
____________________________________________________________________
Table 06h contains a MON4-indexed LUT for con-
trol of the M4DAC voltage. The M4DAC LUT has 32
entries that are configurable to act as one 32-entry
LUT or two 16-entry LUTs. When configured as one
32-byte LUT, each entry corresponds to an incre-
ment of 1/32 of the full scale. When configured as
two 16-byte LUTs, the first 16 bytes and the last 16
bytes each correspond to 1/16 of full scale. Either
of the two sections is selected with a separate con-
figuration bit. This LUT is protected by a PW2 level
access.
Auxiliary Memory is EEPROM accessible at the
I2C slave address, A0h.
See the register map tables for a more complete detail
of each byte’s function, as well as for read/write permis-
sions for each byte.
Shadowed EEPROM
In addition to volatile memory (SRAM) and nonvolatile
memory (EEPROM), the DS1865 also features shadowed
EEPROM. Shadowed EEPROM (SEE) can be configured
as either volatile or nonvolatile memory using the SEEB
bit in Table 02h, Register 80h.
The DS1865 uses shadowed EEPROM memory for key
memory addresses that can be rewritten many times. By
default the shadowed EEPROM bit, SEEB, is not set and
these locations act as ordinary EEPROM. By setting
SEEB, these locations function like SRAM cells, which
allow an infinite number of write cycles without concern
of wearing out the EEPROM. This also eliminates the
requirement for the EEPROM write time, tWR. Because
changes made with SEEB enabled do not affect the
EEPROM, these changes are not retained through
power cycles. The power-up value is the last value writ-
ten with SEEB disabled. This function can be used to
limit the number of EEPROM writes during calibration or
to change the monitor thresholds periodically during nor-
mal operation, helping to reduce the number of times
EEPROM is written. The
Memory Organization descrip-
tion indicates which locations are shadowed EEPROM.
ATB
MISC. CONTROL
BITS
EEPROM
7Fh
I2C SLAVE ADDRESS A0h
00h
FFh
80h
F8h
PW1 LEVEL ACCESS
EEPROM
(120 BYTES)
TABLE 01h
AUXILLARY MEMORY
TABLE SELECT BYTE
PASSWORD ENTRY (PWE)
(4 BYTES)
DIGITAL DIAGNOSTIC
FUNCTIONS
7Fh
I2C SLAVE ADDRESS A2h (DEFAULT)
00h
LOWER MEMORY
FFh
F7h
C7h
F7h
80h
F8h
C8h
CONFIGURATION AND
CONTROL
NO MEMORY
TABLE 02h
FFh
80h
PW2 LEVEL ACCESS
EEPROM
(128 BYTES)
TABLE 03h
C7h
80h
MODULATION LUT
TABLE 04h
A7h
80h
APC LUT
TABLE 05h
9Fh
80h
M4DAC LUT
TABLE 06h
DEC
0
HEX
0
127
7F
128
80
255
FF
Figure 8. Memory Map
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1865T TR | 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:PON Triplexer Control and Monitoring Circuit |
| DS1865T+ | 功能描述:電流和電力監(jiān)控器、調(diào)節(jié)器 PON Triplexer Cntrl & Monitoring Circuit RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Current Regulators 電源電壓-最大:48 V 電源電壓-最小:5.5 V 工作溫度范圍:- 40 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HPSO-8 封裝:Reel |
| DS1865T+T&R | 制造商:Maxim Integrated Products 功能描述:TRIPLEXER CONTROL AND MONITORING CIRCUIT 1TX 1RX 1.25GBPS 28 - Tape and Reel 制造商:Maxim Integrated Products 功能描述:IC PON CONTROL TRI 28-TQFN 制造商:Maxim Integrated Products 功能描述:Current & Power Monitors & Regulators PON Triplexer Cntrl & Monitoring Circuit |
| DS1865T+T&R | 功能描述:電流和電力監(jiān)控器、調(diào)節(jié)器 PON Triplexer Cntrl & Monitoring Circuit RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Current Regulators 電源電壓-最大:48 V 電源電壓-最小:5.5 V 工作溫度范圍:- 40 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HPSO-8 封裝:Reel |
| DS1865T+TR | 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:PON Triplexer Control and Monitoring Circuit |
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