參數(shù)資料
型號(hào): HM5425801B
廠商: Elpida Memory, Inc.
英文描述: 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
中文描述: 256M SSTL_2 DDR SDRAM的接口143 MHz/133 MHz/125 MHz/100 MHz的4 Mword】16位】4-bank/8-Mword】8位】4銀行/ 16 Mword】4位】4 -銀行
文件頁(yè)數(shù): 52/65頁(yè)
文件大?。?/td> 489K
代理商: HM5425801B
HM5425161B, HM5425801B, HM5425401B Series
Data Sheet E0086H20
52
Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing
parameter definitions, see
Timing Waveforms
section.
2. This parameter defines the signal transition delay from the cross point of CLK and
CLK
. The signal
transition is defined to occur when the signal level crossing V
TT
.
3. The timing reference level is V
TT
.
4. Output valid window is defined to be the period between two successive transition of data out or
DQS (read) signals. The signal transition is defined to occur when the signal level crossing V
TT
.
5. t
is defined as Dout transition delay from Low-Z to High-Z at the end of read burst operation. The
timing reference is cross point of CLK and
CLK
. This parameter is not referred to a specific Dout
voltage level, but specify when the device output stops driving.
6. t
is defined as Dout transition delay from High-Z to Low-Z at the beginning of read operation. This
parameter is not referred to a specific Dout voltage level, but specify when the device output begins
driving.
7. Input valid windows is defined to be the period between two successive transition of data input or
DQS (write) signals. The signal transition is defined to occur when the signal level crossing V
REF
.
8. The timing reference level is V
REF
.
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A
specific reference voltage to judge this transition is not given.
10.t
max is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is
not assured.
11.t
= min when these parameters are measured. Otherwise, absolute minimum value of these
values are 10% of t
CK
.
12.V
is assumed to be 2.5 V ± 0.2 V. V
CC
power supply variation per cycle expected to be less than
0.4 V/400 cycle.
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HM5425161BTT-75A 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425801BTT-75A 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425401BTT-75A 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425161BTT-75B 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
HM5425801BTT-75B 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
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