參數(shù)資料
型號: HY27USxxx
廠商: Hynix Semiconductor Inc.
英文描述: 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述: 512兆(64Mx8bit / 32Mx16bit)NAND閃存
文件頁數(shù): 16/43頁
文件大?。?/td> 729K
代理商: HY27USXXX
Rev 0.6 / Oct. 2004
16
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Figure 12. Sequential Row Read Operation
Area A
(1
st
half Page)
Area B
Area C
Read A Command, x8 Devices
(2
nd
half Page) (Spare)
Block
N
th
Page
Read B Command, x8 Devices
Area A
(1
st
half Page)
Area B
(2
nd
half Page)
Area C
(Spare)
Block
N
th
Page
(main area)
(Spare)
Read A Command, x16 Devices
2
nd
Page
N
th
Page
Block
Area A
Area A/B
(Spare)
Read C Command, x8/x16 Devices
N
th
Page
Block
2
nd
Page
1
st
Page
2
nd
Page
1
st
Page
Area A
Area C
1
st
Page
Area C
2
nd
Page
1
st
Page
Figure 13. Sequential Row Read Block Diagrams
Busy
Busy
Busy
tBLBH1
(Read Busy time)
tBLBH1
tBLBH1
Address Inputs
I/O
00h/
01h/50h
1st
Page Output
2nd
Page Output
Nth
Page Output
Command
Code
RB
相關(guān)PDF資料
PDF描述
HY27US16121M 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY29F002TC-70 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TC-45 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TC-55 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
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