參數(shù)資料
型號(hào): HYB18T256160AF-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 Mbi t DDR2 SDRAM
中文描述: 256姆噸DDR2內(nèi)存
文件頁數(shù): 58/90頁
文件大小: 1246K
代理商: HYB18T256160AF-3
Page 58 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
Precharge Power Down Mode Entry and Exit
Auto-Refresh command to Power-Down entry
MRS, EMRS command to Power-Down entry
tXP
NOP
NOP
Precharge
*)
T0
T2
T1
CMD
NOP
NOP
Tn
Tn+1
CKE
Precharge
Power-Down
Entry
NOP
NOP
PrePD
tIS
Tn+2
tIS
Precharge
Power-Down
Exit
Valid
Com mand
tRP
NOP
T3
*) "Precharge" may be an external command or an internal
precharge following Write with AP.
CK, CK
T0
T2
T1
T3
T4
Tn
CMD
CKE
CK, CK
Auto
Refresh
ARPD
tRFC
tis
tXP
Valid
Command
CKE can go low one clock after an Auto-Refresh command
When tRFC expires the DRAM is in Precharge Power-Down Mode
T0
T2
T1
T3
T4
T5
T6
T7
CMD
CKE
CK, CK
MRS or
EMRS
MRS_PD
t
MRD
Enters Precharge Power-Down Mode
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