參數(shù)資料
型號： HYB25D128800ATL-6
廠商： INFINEON TECHNOLOGIES AG
英文描述： 128 Mbit Double Data Rate SDRAM
中文描述： 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù)： 34/85頁
文件大?。?/td> 3085K
代理商： HYB25D128800ATL-6
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
34
Rev. 1.0, 2004-04
Data from any Read burst may be truncated with a Burst Terminate command, as shown on
Figure 14
. The Burst
Terminate latency is equal to the read (CAS) latency, i.e. the Burst Terminate command should be issued x cycles
after the Read command, where x equals the number of desired data element pairs.
Data from any Read burst must be completed or truncated before a subsequent Write command can be issued. If
truncation is necessary, the Burst Terminate command must be used, as shown on
Figure 15
. The example is
shown for
t
DQSS(min)
. The
t
DQSS(max)
case, not shown here, has a longer bus idle time.
t
DQSS(min)
and
t
DQSS(max)
are
defined in
Chapter 3.5.3
.
A Read burst may be followed by, or truncated with, a Precharge command to the same bank (provided that Auto
Precharge was not activated). The Precharge command should be issued x cycles after the Read command,
where x equals the number of desired data element pairs (pairs are required by the 2n prefetch architecture). This
is shown on
Figure 16
for Read latencies of 2 and 2.5. Following the Precharge command, a subsequent
command to the same bank cannot be issued until
t
RP
is met. Note that part of the row precharge time is hidden
during the access of the last data elements.
In the case of a Read being executed to completion, a Precharge command issued at the optimum time (as
described above) provides the same operation that would result from the same Read burst with Auto Precharge
enabled. The disadvantage of the Precharge command is that it requires that the command and address busses
be available at the appropriate time to issue the command. The advantage of the Precharge command is that it
can be used to truncate bursts.
相關PDF資料
PDF描述
HYB25D128400ATL-7 128 Mbit Double Data Rate SDRAM
HYB25D128800ATL-7 128 Mbit Double Data Rate SDRAM
HYB25D128160TCL-75 MEMORY SPECTRUM
HYB25D128160TCL-7F MEMORY SPECTRUM
HYB25D128160TE-37 MEMORY SPECTRUM
相關代理商/技術參數(shù)
參數(shù)描述
HYB25D128800ATL-7 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
HYB25D128800ATL-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
HYB25D128800C 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM
HYB25D128800CC-5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM
HYB25D128800CC-6 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM
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