參數(shù)資料
型號: HYB25D128800ATL-6
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128 Mbit Double Data Rate SDRAM
中文描述: 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 40/85頁
文件大小: 3085K
代理商: HYB25D128800ATL-6
NOP
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
40
Rev. 1.0, 2004-04
Figure 18
Write Burst (Burst Length = 4)
T1
T2
T3
T4
t
DQSS
(max)
NOP
NOP
NOP
Write
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
A10 is Low with the Write command (Auto Precharge is disabled).
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
Maximum DQSS
BA a, COL b
T1
T2
T3
T4
t
DQSS
(min)
NOP
NOP
Write
CK
CK
Command
Address
DQS
Minimum DQSS
BA a, COL b
DQ
DM
Dla-b
Dla-b
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