參數(shù)資料
型號: HYB25D128800ATL-6
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128 Mbit Double Data Rate SDRAM
中文描述: 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 57/85頁
文件大?。?/td> 3085K
代理商: HYB25D128800ATL-6
Data Sheet
57
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
7) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads
or Writes with Auto Precharge disabled.
8) Requires appropriate DM masking.
9)
Concurrent Auto Precharge:
This device supports “Concurrent Auto Precharge”. When a read with auto precharge or a write with auto precharge is
enabled any command may follow to the other banks as long as that command does not interrupt the read or write data
transfer and all other limitations apply (e.g. contention between READ data and WRITE data must be avoided). The
minimum delay from a read or write command with auto precharge enable, to a command to a different banks is
summarized in
Table 11
.
10) A Write command may be applied after the completion of data output.
Table 11
From Command
Truth Table 5: Concurrent Auto Precharge
To Command (different bank)
Minimum Delay with Concurrent
Auto Precharge Support
1 + (BL/2) +
t
WTR
BL/2
1
BL/2
CL (rounded up) + BL/2
1
Unit
WRITE w/AP
Read or Read w/AP
Write to Write w/AP
Precharge or Activate
Read or Read w/AP
Write or Write w/AP
Precharge or Activate
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
Read w/AP
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