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參數(shù)資料
| 型號： | HYB39S16800CT-8 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 16 MBit Synchronous DRAM |
| 中文描述： | 2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO50 |
| 封裝： | 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50 |
| 文件頁數(shù)： | 13/19頁 |
| 文件大小： | 101K |
| 代理商： | HYB39S16800CT-8 |
HYB 39S16400/800/160CT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
13
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................ 0 to + 70
°
C
Storage temperature range.................................................................................... – 55 to + 150
°
C
Input/output voltage .......................................................................... – 0.5 to min (
V
CC
+ 0.5, 4.6) V
Power supply voltage
V
DD
/
V
DDQ
............................................................................. – 1.0 to + 4.6 V
Power Dissipation.......................................................................................................................1 W
Data out current (short circuit) ................................................................................................50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Notes
1. All voltages are referenced to
V
SS.
2.
V
IH
may overshoot to
V
CC
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
–2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and Characteristics for LV-TTL Versions
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
V
CC
+ 0.3
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2, 3
Input low voltage
Output high voltage (
I
OUT
= – 2.0 mA)
Output low voltage (
I
OUT
= 2.0 mA)
Input leakage current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
CC
)
– 0.3
V
1, 2, 3
2.4
–
V
3
–
0.4
V
μ
A
3
– 5
5
I
O(L)
– 5
5
μ
A
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance (CLK)
C
I1
C
I2
2.5
4.0
pF
Input capacitance
(A0 - A12, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM,
UDQM, LDQM))
2.5
5.0
pF
Input/Output capacitance (DQ)
C
IO
4.0
6.5
pF
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