參數(shù)資料
型號: IDT72V261LA
廠商: Integrated Device Technology, Inc.
英文描述: 3.3 VOLT CMOS SuperSync FIFO
中文描述: 3.3伏的CMOS SuperSync先進先出
文件頁數(shù): 17/27頁
文件大小: 310K
代理商: IDT72V261LA
IDT72V261LA/72V271LA
3.3 VOLT CMOS SuperSync FIFO 16,384 x 9 and 32,768 x 9
17
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
Figure 8. Read Cycle, Empty Flag and First Data Word Latency Timing (IDT Standard Mode)
NOTES:
1. t
SKEW3
is the mnimumtime between a rising WCLK edge and a rising RCLK edge to guarantee that
EF
will go HIGH (after one RCLK cycle plus t
REF
). If the time between the rising
edge of WCLK and the rising edge of RCLK is less than t
SKEW3
, then
EF
deassertion may be delayed one extra RCLK cycle.
2.
LD
= HIGH.
3. First word latency: 60ns + t
REF
+ 1*T
RCLK
.
NOTES:
1. t
SKEW1
is the mnimumtime between a rising RCLK edge and a rising WCLK edge to guarantee that
FF
will go high (after one WCLK cycle pus t
WFF
). If the time between the
rising edge of the RCLK and the rising edge of the WCLK is less than t
SKEW1
, then the
FF
deassertion may be delayed one extra WCLK cycle.
2.
LD
= HIGH,
OE
= LOW,
EF
= HIGH
Figure 7. Write Cycle and Full Flag Timing (IDT Standard Mode)
D
0
- D
n
WEN
RCLK
FF
REN
t
ENH
t
ENH
Q
0
- Q
n
DATA READ
NEXT DATA READ
DATA IN OUTPUT REGISTER
t
SKEW1
(1)
4673 drw10
WCLK
NO WRITE
1
2
1
2
t
DS
NO WRITE
t
WFF
t
WFF
t
WFF
t
A
t
ENS
t
ENS
t
SKEW1
(1)
t
DS
t
A
D
X
t
DH
t
CLKH
D
X
+1
t
WFF
t
DH
t
CLK
t
CLKL
RCLK
REN
4673 drw 11
EF
t
CLKH
t
CLKL
t
ENH
t
REF
t
A
t
OLZ
t
OE
Q
0
- Q
n
OE
WCLK
(1)
t
SKEW3
WEN
D
0
- D
n
t
ENS
t
ENS
t
ENH
t
DS
t
DHS
D
0
1
2
t
OLZ
LAST WORD
D
0
D
1
D
1
t
ENS
t
ENH
t
DS
t
DH
t
OHZ
LAST WORD
t
REF
t
ENH
t
ENS
t
A
t
A
t
ENS
t
ENH
t
REF
t
CLK
NO OPERATION
NO OPERATION
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