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參數(shù)資料
| 型號(hào)： | K7R163684B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 & 1Mx18 QDR II b4 SRAM |
| 中文描述： | 512Kx36 |
| 文件頁數(shù)： | 2/18頁 |
| 文件大?。?/td> | 418K |
| 代理商： | K7R163684B |
- 10 -
Rev 3.1
July. 2004
512Kx36 & 1Mx18 QDRTM II b4 SRAM
K7R163684B
K7R161884B
Note: For power-up, VIH
≤ VDDQ+0.3V and VDD ≤ 1.7V and VDDQ ≤ 1.4V t ≤ 200ms
VDDQ
VIL
VDDQ+0.5V
20% tKHKH(MIN)
VSS
VIH
VSS-0.5V
20% tKHKH(MIN)
Undershoot Timing
Overershoot Timing
OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
VDD
1.7
1.9
V
VDDQ
1.4
1.9
V
Reference Voltage
VREF
0.68
0.95
V
Ground
VSS
00
V
VDDQ/2
50
SRAM
Zo=50
0.75V
VREF
ZQ
250
AC TEST OUTPUT LOAD
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250
Parameter
Symbol
Value
Unit
Core Power Supply Voltage
VDD
1.7~1.9
V
Output Power Supply Voltage
VDDQ
1.4~1.9
V
Input High/Low Level
VIH/VIL
1.25/0.25
V
Input Reference Level
VREF
0.75
V
Input Rise/Fall Time
TR/TF
0.3/0.3
ns
Output Timing Reference Level
VDDQ/2
V
AC ELECTRICAL CHARACTERISTICS (VDD=1.8V ±0.1V, TA=0°C to +70°C)
Notes: 1. This condition is for AC function test only, not for AC parameter test.
2. To maintain a valid level, the transitioning edge of the input must :
a) Sustain a constant slew rate from the current AC level through the target AC level, VIL(AC) or VIH(AC)
b) Reach at least the target AC level
c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC)
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTES
Input High Voltage
VIH (AC)
VREF + 0.2
-
V
1,2
Input Low Voltage
VIL (AC)
-
VREF - 0.2
V
1,2
VDDQ+0.25V
VSS-0.25V
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| K7R163684B_06 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDRTM II b4 SRAM |
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