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參數(shù)資料
| 型號： | K7R163684B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 & 1Mx18 QDR II b4 SRAM |
| 中文描述： | 512Kx36 |
| 文件頁數(shù)： | 4/18頁 |
| 文件大?。?/td> | 418K |
| 代理商： | K7R163684B |
- 12 -
Rev 3.1
July. 2004
512Kx36 & 1Mx18 QDRTM II b4 SRAM
K7R163684B
K7R161884B
APPLICATION INRORMATION
THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. TJ=TA + PD x
θJA
PRMETER
SYMBOL
TYP
Unit
NOTES
Junction to Ambient
θJA
17.1
°C/W
Junction to Case
θJC
3.3
°C/W
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250
and VDDQ=1.5V.
2. Periodically sampled and not 100% tested.
PRMETER
SYMBOL
TESTCONDITION
TYP
MAX
Unit
NOTES
Address Control Input Capacitance
CIN
VIN=0V
4
5
pF
Input and Output Capacitance
COUT
VOUT=0V
6
7
pF
Clock Capacitance
CCLK
-5
6
pF
SRAM#1
D
SA R W BW0
Q
ZQ
K
CC
SRAM#4
R
Vt
R=50
Vt=VREF
Vt
R
R=250
BW1
K
D
SA
RW BW0
Q
K
CC
BW1
K
Data In
Data Out
Address
R
W
BW
Return CLK
Source CLK
Return CLK
Source CLK
MEMORY
CONTROLLER
CQ
ZQ R=250
CQ
ZQ
SRAM1 Input CQ
SRAM4 Input CQ
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| K7R163684B_06 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDRTM II b4 SRAM |
| K7R163684B-FC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R163684B-FC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R163684B-FC20000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA |
| K7R163684B-FC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR II b4 SRAM |
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