參數(shù)資料
型號: K7R163684B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Kx36 & 1Mx18 QDR II b4 SRAM
中文描述: 512Kx36
文件頁數(shù): 6/18頁
文件大?。?/td> 418K
代理商: K7R163684B
- 14 -
Rev 3.1
July. 2004
512Kx36 & 1Mx18 QDRTM II b4 SRAM
K7R163684B
K7R161884B
A1
A2
TIMING WAVE FORMS OF READ, WRITE AND NOP
Don
t Care
Undefined
Note: 1. If address A3=A2, data Q3-1=D2-1, data Q3-2=D2-2 , data Q3-3=D2-3, data Q3-4=D2-4
Write data is forwarded immediately as read results.
2.BWx ( NWx ) assumed active.
K
SA
W
K
C
R
D(Data In)
D(Data Out)
A3
D4-3
D4-2
D4-1
D2-4
D2-3
D2-2
D2-1
A4
Q3-3
Q3-2
Q3-1
Q1-4
Q1-3
Q1-2
Q1-1
READ
NOP
READ
WRITE
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