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參數(shù)資料
| 型號(hào)： | K8D6316UBM-YC08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 6400位（800萬x8/4M x16）的雙銀行NOR閃存 |
| 文件頁數(shù)： | 15/48頁 |
| 文件大?。?/td> | 767K |
| 代理商： | K8D6316UBM-YC08 |
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NOR FLASH MEMORY
K8D6x16UTM / K8D6x16UBM
Revision 1.6
September, 2006
15
Notes :
1. RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data
DA : Dual Bank Address (A20 - A21), BA : Block Address (A12 - A21), X = Don’t care .
2. To terminate the Autoselect Mode, it is necessary to write Reset command to the register.
3. The 4th cycle data of Autoselect mode is output data.
The 3rd and 4th cycle bank addresses of Autoselect mode must be same.
4. The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode.
5. The Erase Suspend command is applicable only to the Block Erase operation.
6. Command is valid when the device is in read mode or Autoselect mode.
7. DQ8 - DQ15 are don’t care in command sequence, but RD and PD is excluded.
8. A11 - A21 are also don’t care, except for the case of special notice.
Description
CE
OE
WE
A21
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8 to DQ15
DQ7
to
DQ0
BYTE
=V
IH
BYTE
=V
IL
Manufacturer ID
L
L
H
DA
X
V
ID
X
L
X
L
L
X
X
ECH
Device Code K8D6316UT
(Top Boot Block)
L
L
H
DA
X
V
ID
X
L
X
L
H
22H
X
E0H
Device Code K8D6316UB
(Bottom Boot Block)
L
L
H
DA
X
V
ID
X
L
X
L
H
22H
X
E2H
Block Protection
Verification
L
L
H
BA
X
V
ID
X
L
X
H
L
X
X
01H (Protected),
00H (Unprotected)
Secode
Block (2)
Indicator Bit (DQ7)
L
L
H
DA
X
V
ID
X
L
X
H
H
X
X
80H (Factory locked),
00H (Not factory locked)
Table 9. K8D6316U Autoselect Codes, (High Voltage Method)
Notes :
1. L=Logic Low=V
IL
, H=Logic High=V
IH
, DA=Dual Bank Address, BA=Block Address, X=Don’t care
.
2. Secode Block : Security Code Block.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D6316UBM-YC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UTM-DC07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
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