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參數(shù)資料
| 型號(hào)： | K8D6316UBM-YC08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 6400位（800萬(wàn)x8/4M x16）的雙銀行NOR閃存 |
| 文件頁(yè)數(shù)： | 4/48頁(yè) |
| 文件大?。?/td> | 767K |
| 代理商： | K8D6316UBM-YC08 |
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NOR FLASH MEMORY
K8D6x16UTM / K8D6x16UBM
Revision 1.6
September, 2006
4
Table 2. K8D6316U DEVICE BANK DIVISIONS
Device
Part Number
Bank 1
Bank 2
Mbit
Block Sizes
Mbit
Block Sizes
K8D6316U
16 Mbit
Eight 8 Kbyte/4 Kword,
thirty-one 64 Kbyte/32 Kword
48 Mbit
Ninety-six
64 Kbyte/32 Kword
ORDERING INFORMATION
K 8 D 6x 1 6 U T M - T I 0 7
Samsung
NOR Flash Memory
Device Type
Dual Bank Boot Block
Bank Division
63 = 16Mbits + 48Mbits
Operating Temperature Range
C = Commercial Temp. (0
°
C to 70
°
C)
I = Industrial Temp. (-40
°
C to 85
°
C)
Package
P = 48TSOP1(Lead-Free) Y = 48 TSOP1
D : FBGA(Lead Free) F : FBGA
L : TBGA(Lead Free) T : TBGA
Block Architecture
T = Top Boot Block
B = Bottom Boot Block
Version
M = 1st Generation
Access Time
07 = 70 ns
08 = 80 ns
09 = 90 ns
Operating Voltage Range
2.7V to 3.6V
Organization
x8/x16 Selectable
Table 1. PRODUCT LINE-UP
Part No.
- 7
-8
-9
Vcc
2.7V~3.6V
Max. Address Access Time (ns)
70ns
80ns
90ns
Max. CE Access Time (ns)
70ns
80ns
90ns
Max. OE Access Time (ns)
25ns
25ns
35ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K8D6316UBM-YC09 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI07 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI09 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UTM-FI09 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D6316UBM-YC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UTM-DC07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
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