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參數(shù)資料
| 型號(hào)： | K8D6316UBM-YC08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 6400位（800萬(wàn)x8/4M x16）的雙銀行NOR閃存 |
| 文件頁(yè)數(shù)： | 32/48頁(yè) |
| 文件大?。?/td> | 767K |
| 代理商： | K8D6316UBM-YC08 |
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NOR FLASH MEMORY
K8D6x16UTM / K8D6x16UBM
Revision 1.6
September, 2006
32
AC CHARACTERISTICS
Read Operations
AC TEST CONDITION
Parameter
Value
Input Pulse Levels
0V to Vcc
Input Rise and Fall Times
5ns
Input and Output Timing Levels
Vcc/2
Output Load
C
L
= 30pF
Note :
1. Not 100% tested.
Parameter
Symbol
V
CC
=2.7V~3.6V
Unit
-7
-8
-9
Min
Max
Min
Max
Min
Max
Read Cycle Time (1)
t
RC
70
-
80
-
90
-
ns
Address Access Time
t
AA
-
70
-
80
-
90
ns
Chip Enable Access Time
t
CE
-
70
-
80
-
90
ns
Output Enable Time
t
OE
-
25
-
25
-
35
ns
CE & OE Disable Time (1)
t
DF
-
16
-
16
-
16
ns
Output Hold Time from Address, CE or OE (1)
t
OH
0
-
0
-
0
-
ns
Notes :
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component(at 5 MHz).
The read current is typically 14 mA (@ VCC=3.0V , OE at VIH.)
2. I
CC
active during Internal Routine(program or erase) is in progress.
3. I
CC
active during Read while Write is in progress.
4. The high voltage ( V
HH
or V
ID
) must be used in the range of Vcc = 3.0V
±
0.3V
5. Not 100% tested.
6. Typical value are measured at Vcc = 3.0V,T
A
=25
°
C , Not 100% tested.
CAPACITANCE
(T
A
= 25
°
C, V
CC
= 3.3V, f = 1.0MHz)
Note
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
10
pF
Control Pin Capacitance
C
IN2
V
IN
=0V
-
10
pF
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Voltage for Autoselect and
Block Protect (4)
Output Low Level
V
ID
V
CC
= 3.0V
±
0.3V
8.5
-
12.5
V
V
OL
I
OL
=100
μ
A, V
CC
=V
CCmin
-
-
0.4
V
Output High Level
V
OH
I
OH
=-100
μ
A, Vcc = V
CCmin
V
CC
-0.4
-
-
V
Low Vcc Lock-out Voltage (5)
V
LKO
1.8
-
2.5
V
0V
Vcc
Vcc/2
Vcc/2
Input Pulse and Test Point
Input & Output
Test Point
Output Load
*
CL= 30pF including Scope
and Jig Capacitance
C
L
Device
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D6316UBM-YC09 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI07 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI08 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI09 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UTM-DC07 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
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