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參數(shù)資料
| 型號(hào)： | K8D6316UBM-YC08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 6400位（800萬(wàn)x8/4M x16）的雙銀行NOR閃存 |
| 文件頁(yè)數(shù)： | 34/48頁(yè) |
| 文件大小： | 767K |
| 代理商： | K8D6316UBM-YC08 |
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NOR FLASH MEMORY
K8D6x16UTM / K8D6x16UBM
Revision 1.6
September, 2006
34
AC CHARACTERISTICS
Write(Erase/Program)Operations
Alternate CE Controlled Writes
Notes :
1. Not 100% tested.
2.This does not include the preprogramming time.
Parameter
Symbol
V
CC
=2.7V~3.6V
Unit
-7
-8
-9
Min
Max
Min
Max
Min
Max
Write Cycle Time (1)
t
WC
70
-
80
-
90
-
ns
Address Setup Time
t
AS
0
-
0
-
0
-
ns
Address Hold Time
t
AH
45
-
45
-
45
-
ns
Data Setup Time
t
DS
35
-
35
-
45
-
ns
Data Hold Time
t
DH
0
-
0
-
0
-
ns
Output Enable Setup Time (1)
t
OES
0
-
0
-
0
-
ns
Output
Enable
Hold Time
Read (1)
t
OEH1
0
-
0
-
0
-
ns
Toggle and Data Polling (1)
t
OEH2
10
-
10
-
10
-
ns
WE Setup Time
t
WS
0
-
0
-
0
-
ns
WE Hold Time
t
WH
0
-
0
-
0
-
ns
CE Pulse Width
t
CP
35
-
35
-
45
-
ns
CE Pulse Width High
t
CPH
25
-
25
-
30
-
ns
Programming Operation
Word
t
PGM
14(typ.)
14(typ.)
14(typ.)
μ
s
Byte
9(typ.)
9(typ.)
9(typ.)
μ
s
Accelerated Programming
Operation
Word
t
ACCPGM
9(typ.)
9(typ.)
9(typ.)
μ
s
Byte
7(typ.)
7(typ.)
7(typ.)
μ
s
Block Erase Operation (2)
t
BERS
0.7(typ.)
0.7(typ.)
0.7(typ.)
sec
BYTE Switching Low to Output HIGH-Z
t
FLQZ
25
-
25
-
30
-
ns
ERASE AND PROGRAM PERFORMANCE
Notes :
1. 25
°
C, V
CC
=
3.0V 100,000 cycles, typical pattern
.
2. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte.
In the preprogramming step of the Internal Erase Routine, all bytes are programmed to 00H before erasure.
Parameter
Limits
Unit
Comments
Min
Typ
Max
Block Erase Time
-
0.7
15
sec
Excludes 00H programming
prior to erasure
Chip Erase Time
-
98
-
sec
Word Programming Time
-
14
330
μ
s
Excludes system-level overhead
Byte Programming Time
-
9
210
μ
s
Excludes system-level overhead
Accelerated Byte/Word
Program Time
Word Mode
-
9
210
μ
s
Excludes system-level overhead
Byte Mode
-
7
150
μ
s
Excludes system-level overhead
Chip Programming Time
Word Mode
-
59
177
sec
Excludes system-level overhead
Byte Mode
-
75
225
sec
Erase/Program Endurance
100,000
-
-
cycles
Minimum 100,000 cycles guaran-
teed
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| K8D6316UBM-YC09 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
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| K8D6316UBM-YI08 | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D6316UBM-YC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UBM-YI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| K8D6316UTM-DC07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
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