參數(shù)資料
型號(hào)： K9F1208D0B-Y
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit NAND Flash Memory
中文描述： 6400 × 8位NAND閃存
文件頁數(shù)： 2/45頁
文件大小： 767K
代理商： K9F1208D0B-Y
FLASH MEMORY
2
K9F1208U0B
K9F1208D0B
Advance
GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200
μ
s on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command
input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal
verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B
′
s extended reliability of
100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an
optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring
non-volatility.
FEATURES
Voltage Supply
- 1.8V device(K9F1208Q0B) : 1.70~1.95V
- 2.65V device(K9F1208D0B) : 2.4~2.9V
- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array : (64M + 2048K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
Page Read Operation
- Page Size : (512 + 16)Byte
- Random Access : 15
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
64M x 8 Bit NAND Flash Memory
PRODUCT LIST
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9F1208X0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0B-GCB0/GIB0
63- Ball FBGA (8.5 x 13 , 1.0 mm width)
- K9F1208U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1208X0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208X0B-JCB0/JIB0
63- Ball FBGA - Pb-free Package
- K9F1208U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0B-V,F(WSOPI ) is the same device as
K9F1208U0B-Y,P(TSOP1) except package type.
Part Number
Vcc Range
PKG Type
K9F1208Q0B-D,H
1.70 ~ 1.95V
FBGA
K9F1208D0B-Y,P
2.4 ~ 2.9V
TSOP1
K9F1208D0B-D,H
FBGA
K9F1208U0B-Y,P
2.7 ~ 3.6V
TSOP1
K9F1208U0B-D,H
FBGA
K9F1208U0B-V,F
WSOP1
相關(guān)PDF資料
PDF描述
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
K9F1208U0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0B Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0A-XXB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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