參數(shù)資料
型號(hào)： K9F1208D0B-Y
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit NAND Flash Memory
中文描述： 6400 × 8位NAND閃存
文件頁(yè)數(shù)： 41/45頁(yè)
文件大?。?/td> 767K
代理商： K9F1208D0B-Y
FLASH MEMORY
41
K9F1208U0B
K9F1208D0B
Advance
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code, Reserved(A5h), Multi plane operation
code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation. The command register
remains in Read ID mode until further commands are issued to it. Figure 21 shows the operation sequence.
Figure 21. Read ID Operation 1
CE
CLE
I/O
0
~
7
ALE
RE
WE
90h
00h
ECh
Address. 1cycle
Maker code
Device code
t
CEA
t
AR
t
REA
Device
Code
A5h
C0h
Multi-Plane code
t
WHR
Device
Device Code
K9F1208Q0B
36h
K9F1208D0B
76h
K9F1208U0B
76h
相關(guān)PDF資料
PDF描述
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
K9F1208U0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0B Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0A-XXB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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