參數(shù)資料
型號(hào)： K9F1208D0B-Y
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit NAND Flash Memory
中文描述： 6400 × 8位NAND閃存
文件頁數(shù)： 33/45頁
文件大小： 767K
代理商： K9F1208D0B-Y
FLASH MEMORY
33
K9F1208U0B
K9F1208D0B
Advance
Figure 8. Read2 Operation
50h
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Start Add.(4Cycle)
I/O
X
RE
Figure 9. Sequential Row Read1 Operation
(only for K9F1208U0B-Y,P and K9F1208U0B-V,F valid within a block)
00h
01h
A
0
~ A
7
& A
9
~ A
25
I/O
X
R/B
Start Add.(4Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
t
R
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
≈
( 00h Command)
Data Field
Spare Field
( 01h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held low during tR
Main array
Data Field
Spare Field
A
0
~ A
7
& A
9
~ A
25
相關(guān)PDF資料
PDF描述
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
K9F1208U0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0B Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0A-XXB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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