參數(shù)資料
型號(hào)： K9F1208D0B-Y
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit NAND Flash Memory
中文描述： 6400 × 8位NAND閃存
文件頁(yè)數(shù)： 20/45頁(yè)
文件大?。?/td> 767K
代理商： K9F1208D0B-Y
FLASH MEMORY
20
K9F1208U0B
K9F1208D0B
Advance
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and reading
would provide significant savings in power consumption.
CE
WE
t
WP
t
CH
t
CS
Start Add.(4Cycle)
80h
Data Input
CE
CLE
ALE
WE
I/O
X
Data Input
CE don’t-care
≈
≈
10h
Start Add.(4Cycle)
00h
CE
CLE
ALE
WE
I/O
X
Data Output(sequential)
CE don’t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
X
Figure 7. Program Operation with CE don’t-care.
Figure 8. Read Operation with CE don’t-care.
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held
low during tR
相關(guān)PDF資料
PDF描述
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
K9F1208U0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0B Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0A-XXB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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