參數(shù)資料
型號: K9F1208D0B-Y
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory
中文描述: 6400 × 8位NAND閃存
文件頁數(shù): 28/45頁
文件大?。?/td> 767K
代理商: K9F1208D0B-Y
FLASH MEMORY
28
K9F1208U0B
K9F1208D0B
Advance
Multi-Plane Block Erase Operation
Block Erase Setup Command
Erase Confirm Command
Read Multi-Plane
Status Command
Max. 4 times repeatable
60h
A
9
~ A
25
I/O
0
~
7
R/B
Address
60h
A
9
~ A
25
60h
A
9
~ A
25
60h
A
9
~ A
25
D0h
71h
t
BERS
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
CE
CLE
R/B
I/O
X
WE
ALE
RE
60h
A
17
~ A
24
A
9
~ A
16
DOh
71h
I/O 0
Busy
t
WB
t
BERS
Page(Row)
Address
t
WC
A
25
相關(guān)PDF資料
PDF描述
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
K9F1208U0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0B Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0A-XXB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory